byg21k-m3/hm3, byg21m-m3/hm3 www.vishay.com vishay general semiconductor revision: 23-feb-16 1 document number: 89476 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast avalanche smd rectifier features ? low profile package ? ideal for automated placement ? glass passivated pellet chip junction ? low reverse current ? soft recovery characteristic ? fast reverse recovery time ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in fast switching re ctification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade ? base p/nhm3 - halogen-free, rohs-compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 800 v, 1000 v i fsm 30 a i r 1.0 a v f 1.6 v t rr 120 ns e r 20 mj t j max. 150 c package do-214ac (sma) diode variation single die do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol byg21k byg21m unit device marking code byg21k byg21m maximum repetitive peak reverse voltage v rrm 800 1000 v average forward current i f(av) 1.5 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 a pulse energy in avalanche mode, non repetitive ? (inductive load switch off) i (br)r = 1 a, t j = 25 c e r 20 mj operating junction and storage temperature range t j , t stg -55 to +150 c
byg21k-m3/hm3, byg21m-m3/hm3 www.vishay.com vishay general semiconductor revision: 23-feb-16 2 document number: 89476 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse test: 300 s pulse width, 1 % duty cycle ? ? notes (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu ? note (1) aec-q101 qualified ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current vs. forward voltage fig. 2 - max. average forward current vs. ambient temperature electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol byg21k byg21m unit maximum instantaneous forward voltage i f = 1 a t j = 25 c v f (1) 1.5 v i f = 1.5 a 1.6 maximum reverse current v r = v rrm t j = 25 c i r 1 a t j = 100 c 10 maximum reverse ? recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 120 ns thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol byg21k byg21m unit typical thermal resistance, junction to lead, t l = const. r ? jl 25 c/w typical thermal resistance, junction to ambient r ? ja (1) 150 c/w r ? ja (2) 125 r ? ja (3) 100 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode byg21k-m3/tr 0.064 tr 1800 7" diameter plastic tape and reel byg21k-m3/tr3 0.064 tr3 7500 13" di ameter plastic tape and reel byg21khm3/tr (1) 0.064 tr 1800 7" diameter plastic tape and reel byg21khm3/tr3 (1) 0.064 tr3 7500 13" diameter plastic tape and reel 0.001 0.01 0.1 1 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 for w ard voltage (v) for w ard c u rrent (a) t j = 150 c t j = 25 c 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 am b ient temperat u re (c) a v erage for w ard c u rrent ( a) 100 75 50 25 0 125 150 v r = v rrm half sine- w a v e r ja = 25 k/ w r ja = 125 k/ w r ja = 150 k/ w
byg21k-m3/hm3, byg21m-m3/hm3 www.vishay.com vishay general semiconductor revision: 23-feb-16 3 document number: 89476 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - reverse current vs. junction temperature fig. 4 - max. reverse power dissipation vs. junction temperature fig. 5 - diode capacitance vs. reverse voltage fig. 6 - max. reverse recovery charge vs. forward current fig. 7 - thermal response 1 10 100 25 50 75 100 125 150 re v erse c u rrent (a) j u nction temperat u re ( c) v r = v rrm 0 20 40 60 8 0 100 120 25 50 75 100 125 150 re v erse po w er dissipation (m w ) j u nction temperat u re (c) v r = v rrm p r - limit at 100 % v r p r - limit at 8 0 % v r 0 5 10 15 20 25 0.1 1 10 100 f = 1 mhz re v erse voltage (v) diode capac itance (pf) t a = 125 c 0 50 100 150 200 0 0.2 0.4 0.6 0. 8 1.0 re v erse reco v ery charge (nc) for w ard c u rrent (a) t a = 100 c t a = 25 c t a = 75 c t a = 50 c i r = 0.5 a, i r = 0.125 a 1 10 100 1000 thermal resistance for p u lse cond. (k/ w ) p u lse length (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 single p u lse 125 k/ w dc t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01
byg21k-m3/hm3, byg21m-m3/hm3 www.vishay.com vishay general semiconductor revision: 23-feb-16 4 document number: 89476 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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